050-7412 rev e 1-2006 apt13gp120b_s(g) typical performance curves maximum ratings all ratings: t c = 25c unless otherwise speci?ed. static electrical characteristics characteristic / test conditionscollector-emitter breakdown voltage (v ge = 0v, i c = 500a) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 13a, t j = 125c) collector cut-off current (v ce = 1200v, v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = 1200v, v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) symbol v (br)ces v ge(th) v ce(on) i ces i ges units volts ana symbol v ces v ge i c1 i c2 i cm rbsoa p d t j ,t stg t l apt13gp120b_s(g) 1200 30 4120 50 50a @ 960v 250 -55 to 150 300 unit volts amps watts c parametercollector-emitter voltage gate-emitter voltage continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 reverse bias safe operating area @ t j = 150c total power dissipationoperating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. apt website - http://www.advancedpower.com caution: these devices are sensitive to electrostatic discharge. proper hand ling procedures should be followed. min typ max 1200 3 4.5 6 3.3 3.9 3.0 500 3000 100 the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 100 khz operation @ 600v, 10a ? low gate charge ? 50 khz operation @ 600v, 16a ? ultrafast tail current shutoff ? rbsoa rated power mos 7 ? igbt 1200v apt13gp120b apt13gp120s APT13GP120BG* apt13gp120sg* *g denotes rohs compliant, pb free terminal finish. ? g c e t o - 2 4 7 g c e d 3 pak g c e b s downloaded from: http:///
050-7412 rev e 1-2006 apt13gp120b_s(g) thermal and mechanical characteristics unit c/w gm min typ max .50 n/a 5.9 characteristicjunction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc rbsoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 600v i c = 13a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 960v inductive switching (25c) v cc = 600v v ge = 15v i c = 13a r g = 5 ? t j = +25c inductive switching (125c) v cc = 600v v ge = 15v i c = 13a r g = 5 ? t j = +125c characteristicinput capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge reverse bias safe operating area turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay timecurrent rise time turn-off delay time current fall time turn-on switching energy 4 4 turn-on switching energy (diode) 5 5 turn-off switching energy 6 min typ max 1145 90 15 7.5 55 8 26 50 9 12 28 34 115 330 165 9 12 70 200 225 710 840 unit pf v nc a ns j ns j 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4 e on1 is the clamped inductive turn-on energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. tested in inductive switching test circuit shown in ?gure 21, but with a silicon carbide diode.5 e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switching loss. (see figures 21, 22.) 6 e off is the clamped inductive turn-off energy measured in accordance with jedec standard jesd24-1. (see figures 21, 23.) apt reserves the right to change, without notice, the speci?cations and information contained herein . downloaded from: http:///
050-7412 rev e 1-2006 apt13gp120b_s(g) typical performance curves bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 250s pulse test<0.5 % duty cycle t j = 25c. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle t j = 125c t j = 25c t j = -55c 4035 30 25 20 15 10 50 4035 30 25 20 15 10 50 6 5 4 3 2 1 0 1.101.05 1.00 0.95 0.90 t j = 125c t j = 25c t j = -55c v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(t j = 25c) figure 2, output characteristics (t j = 125c) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction tem perature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temper ature 0 1 2 3 4 5 6 0 1 2 3 4 5 6 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 6 8 10 12 14 16 -55 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 125c t j = 25c t j = -55c v ce = 240v v ce = 600v v ce = 960v i c = 13a t j = 25c i c = 26a i c = 13a i c = 6.5a i c = 26a i c = 13a i c = 6.5a 4035 30 25 20 15 10 50 1614 12 10 86 4 2 0 5 4 3 2 1 0 6050 40 30 20 10 0 downloaded from: http:///
050-7412 rev e 1-2006 apt13gp120b_s(g) v ge =15v,t j =125c v ge =15v,t j =25c v ce = 600v r g = 5 ? l = 100 h switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector curre nt i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junc tion temperature v ce = 600v v ge = +15v r g = 5 ? r g = 5 ? , l = 100 h, v ce = 600v v ce = 600v t j = 25c or 125c r g = 5 ? l = 100 h v ge = 15v t j = 25 or 125c,v ge = 15v v ce = 600v v ge = +15v r g = 5 ? 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 5 10 15 20 25 30 0 10 20 30 40 50 25 50 75 100 125 r g = 5 ? , l = 100 h, v ce = 600v t j = 125c, v ge = 15v t j = 25c, v ge = 15v 100 9080 70 60 50 40 30 20 10 0 300250 200 150 100 50 0 16001400 1200 1000 800600 400 200 0 16001400 1200 1000 800600 400 200 0 t j = 125c t j = 25c 1210 86 4 2 0 30 25 20 15 10 50 14001200 1000 800600 400 200 0 18001600 1400 1200 1000 800600 400 200 0 t j = 25c t j = 125c e on2, 26a e off, 26a e on2, 13a e off, 13a e on2, 6.5a e off, 6.5a v ce = 600v v ge = +15v t j = 125c v ce = 600v v ge = +15v r g = 5 ? e on2, 26a e off, 26a e off, 13a e on2, 13a e on2, 6.5a e off, 6.5a downloaded from: http:///
050-7412 rev e 1-2006 apt13gp120b_s(g) typical performance curves 0.600.50 0.40 0.30 0.20 0.10 0 z jc , thermal impedance (c/w) 0.3 0.9 0.7 single pulse rectangular pulse duration (seconds) figure 19a, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 3,0001,000 500100 5010 1 6050 40 30 20 10 0 c, capacitance ( p f) i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18,minimim switching safe operatin g area 0 10 20 30 40 50 0 200 400 600 800 1000 figure 19b, transient thermal impedance model 5 10 15 20 25 30 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 %v ce = xxxv r g = 5 ? 181100 5010 0.5 0.1 0.05 f max = min (f max , f max2 ) 0.05 f max1 = t d(on) + t r + t d(off) + t f p diss - p cond e on2 + e off f max2 = p diss = t j - t c r jc c res c oes c ies 0.2160.284 0.006f0.161f power (watts) rc model junction temp. ( c) case temperature. ( c) peak t j = p dm x z jc + t c duty factor d = t 1 / t 2 t 2 t 1 p dm note: downloaded from: http:///
050-7412 rev e 1-2006 apt13gp120b_s(g) figure 22, turn-on switching waveforms and de?nitions figure 23, turn-off switching waveforms and de?nitions t j = 125c collector current collector voltage gate voltage switching energy 5% 10% t d(on) 90% 10% t r 5% t j = 125c collector voltage collector current gate voltage switching energy 0 90% t d(off) 10% t f 90% apt15dq120 15.49 (.610)16.26 (.640) 5.38 (.212)6.20 (.244) 6.15 (.242) bsc 4.50 (.177) max. 19.81 (.780)20.32 (.800) 20.80 (.819)21.46 (.845) 1.65 (.065)2.13 (.084) 1.01 (.040)1.40 (.055) 3.50 (.138)3.81 (.150) 2.87 (.113)3.12 (.123) 4.69 (.185)5.31 (.209) 1.49 (.059) 2.49 (.098) 2.21 (.087)2.59 (.102) 0.40 (.016)0.79 (.031) collector collector emitter gate 5.45 (.215) bsc dimensions in millimeters and (inches ) 2-plcs. 15.95 (.628) 16.05(.632) 1.22 (.048) 1.32 (.052) 5.45 (.215) bsc {2 plcs.} 4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 2.67 (.105) 2.84 (.112) 0.46 (.018) {3 plcs} 0.56 (.022) dimensions in millimeters (inches) heat sink (collector)and leads are plated 3.81 (.150) 4.06 (.160) (base of lead) collector (heat sink) 1.98 (.078) 2.08 (.082) gate collector emitter 0.020 (.001) 0.178 (.007) 1.27 (.050) 1.40 (.055) 11.51 (.453) 11.61 (.457) 13.41 (.528) 13.51(.532) revised 8/29/97 1.04 (.041) 1.15(.045) 13.79 (.543) 13.99(.551) revised 4/18/95 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign p atents. us and foreign patents pending. all rights reserved. to - 247 package outlin e e1 sac: tin, silver, copper e3 sac: tin, silver, copper to-268 (d 3 ) package outline i c a d.u.t. v ce figure 21, inductive switching test circui t v cc downloaded from: http:///
|
